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    Journals >Infrared and Laser Engineering >Volume 37 >Issue 2 >Page 270 > Article
    • Infrared and Laser Engineering
    • Vol. 37, Issue 2, 270 (2008)
    Effect of electron irradiation on the GaN-based p-i-n UV detector
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]*
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of electron irradiation on the GaN-based p-i-n UV detector[J]. Infrared and Laser Engineering, 2008, 37(2): 270 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of electron irradiation on the GaN-based p-i-n UV detector[J]. Infrared and Laser Engineering, 2008, 37(2): 270
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