Researching

Journals
  • Advanced Photonics
  • Photonics Insights
  • Advanced Photonics Nexus
  • Photonics Research
  • Advanced Imaging
  • View All Journals
  • Chinese Optics Letters
  • High Power Laser Science and Engineering
    • Articles
  • Optics
  • Physics
  • Geography
  • View All Subjects
    • Conferences
  • CIOP
  • HPLSE
  • AP
  • View All Events
    • News
    About CLP
    Search by keywords or author
    Journals >Infrared and Laser Engineering >Volume 45 >Issue 5 >Page 520002 > Article
    • Infrared and Laser Engineering
    • Vol. 45, Issue 5, 520002 (2016)
    Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment
    Li Ping1、2、3, Li Tao1、2, Deng Shuangyan1、2, Li Xue1、2, Shao Xiumei1、2, Tang Hengjing1、2, and Gong Haimei1、2
    Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
    • show less
    DOI: 10.3788/irla201645.0520002 Cite this Article
    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002 Copy Citation Text show less
    Abstract
    Get PDF
    Figures&Tables (0)
    Equations (0)
    References (9)
    Get Citation
    Copy Citation Text
    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002
    Download Citation
    Tools
    Share
    Save the article for my favorites
    Paper Information
    Recommended Topics
    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology