1Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
2Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
3Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
Fig. 1. (a) Schematic diagram representation of a ring resonator (top images: propagated light field of non-resonant i and resonant condition i); (b) resonant spectrum of a ring modulator: the resonant peak i will have a shift i under the applied voltage.
Fig. 3. (a) Designed cross section of the core/EO polymer ring resonator waveguide; (b) simulated TM mode intensity distribution; (c) top view scanning electron microscopy (SEM) image of the ring structure (left: view of cross section, right: view of bus-ring gap). Adapted with permission from Ref. [11].
Fig. 4. Conceptual representation of an EO polymer/Si slot waveguide ring resonator modulator: the applied voltage drops only across the slot filled with the EO polymer, allowing a strong overlap between the electric and optic fields.
Fig. 5. (a) Cross section of the designed horizontal slot waveguide, (b) the calculated TM mode distribution, indicating a highly concentrated optical field within the EO polymer, (c) calculated electric-field distribution in the vertical-direction, and (d) device SEM image. Adapted with permission from Ref. [39].
Fig. 6. (a) Schematic of the etching-free ring resonator modulator, and (b) the fitted high resolution spectra of one resonant peak at 1549.57 nm and its spectral shift with a range of bias voltages. The shift of the resonance peak linearly fitted with the bias voltages (inset). Adapted with permission from Ref. [20].
Fig. 7. Schematic of the designed athermal ring resonator modulator: top figures are the high-frequency response (10 MHz) at different temperatures. Adapted with permission from Ref. [40].