Author Affiliations
1CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China2CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China3Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China4State Key Laboratory for Modern Optical Instrumentation, Centre for Optical and Electromagnetic Research, Zhejiang Provincial Key Laboratory for Sensing Technologies, Zhejiang University, Zijingang Campus, Hangzhou 310058, China5State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China6Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, Peking University, Bejing 100871, China7School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510000, China8National Innovation Institute of Defense Technology, AMS, Beijing 100071, Chinashow less
Fig. 1. Solid-state quantum emitters in silicon photonics. (a) Position grown InAs/InP quantum dots on a silicon photonic chip by the pick-and-place technique. Adapted from [
59]. (b) Integrate heterogeneous optical components with a transfer-printing-based approach. Adapted from [
62]. (c) Atomic structure of the G-center. Adapted from [
63]. (d) Si nanopillar including the G-center. Adapted from [
64]. (e) Bullseye structures used to enhance vertical coupling of G-centers. Adapted from [
65].
Fig. 2. Integrated SNSPDs for single-photon detection. (a) Principle of traveling wave coupling. Adapted from [
37]. (b) SNSPD within a high-quality factor microcavity. Adapted from [
84]. (c) Cavity-integrated SNSPD. Adapted from [
87]. (d) SNSPD implemented in a two-dimensional photonic crystal cavity. Adapted from [
88]. (e) A typical chain of single-photon detector segments for signal multiplexing and number resolution. Adapted from [
89].
Fig. 3. Wavelength division multiplexing techniques in silicon photonics. (a) Cascaded Mach–Zehnder demultiplexer. Adapted from [
105]. (b) The wavelength division multiplexing receiver chip with an integrated arrayed waveguide grating. Adapted from [
110]. (c) Coupled five-ring silicon filter. Adapted from [
111]. (d) Waveguide Bragg grating add-drop filter. Adapted from [
112].
Fig. 4. Mode division multiplexing techniques in silicon photonics. (a) Mode (de)multiplexer with adiabatic taper. Adapted from [
125]. (b) Mode (de)multiplexer. Adapted from [
126]. (c) Multiport multimode waveguide crossing using a metamaterial-based Maxwell’s fisheye lens. Adapted from [
127]. (d) Digital metastructure-based multimode bending. Adapted from [
128]. (e) High-speed optical two-mode switch. Adapted from [
129]. (f) Reconfigurable optical add-drop multiplexer for hybrid wavelength/mode-division-multiplexing systems. Adapted from [
124].
Fig. 5. Silicon photonic modulators at cryogenic temperatures. (a) The plasma dispersion microdisk modulator. Adapted from [
138]. (b) The
BaTiO3-Si racetrack resonator. Adapted from [
139]. (c) The integrated PIN junction modulator and unbalanced Mach–Zehnder interferometer composed of the modulator. Adapted from [
140].
Fig. 6. Chip interconnection techniques in silicon photonics. (a) Diffraction grating-based coupling structure. Adapted from [
35]. (b) The focusing grating. Adapted from [
146]. (c) The double-etched apodized waveguide grating coupler. Adapted from [
147]. (d) The grating coupler with a single aluminum backside mirror. Adapted from [
148]. (e) The mode-size converter as end coupler. Adapted from [
149]. (f) Coupler structure. Adapted from [
150]. (g) The 3D-printed optical probes on the fiber end faces. Adapted from [
151]. (h) Fiber cores and different silicon waveguides connected by photonic wire bonds. Adapted from [
152]. (i)
In situ 3D nanoprinted free-form lenses and expanders. Adapted from [
153].
Fig. 7. Multiphoton and high-dimensional applications with silicon photonic devices. (a) Silicon photonic chip for the generation and sampling of quantum states. Adapted from [
161]. (b) Coherent pumping of two sources and processing of the emitted photons. Adapted from [
47]. (c) Chip-to-chip high-dimensional quantum key distribution based on multicore fiber. Adapted from [
187]. (d) Silicon device for multidimensional quantum entanglement. Adapted from [
188]. (e) Programmable qudit-based quantum processor. Adapted from [
189].
Fig. 8. Quantum error correction with silicon photonic devices. Error-protected qubits for quantum computation. Adapted from [
163].
Fig. 9. Quantum key distribution (QKD) with silicon photonic devices. (a) Integrated devices for time-bin encoded BB84. Adapted from [
209]. (b) Integrated devices for high-speed measurement-device-independent QKD. Adapted from [
216]. (c) Silicon photonics encoder with high-speed electro-optic phase modulators. Adapted from [
211]. (d) Detector-integrated on-chip QKD receiver. Adapted from [
95].
Fig. 10. Quantum state teleportation with silicon photonic devices. Chip-to-chip quantum teleportation. Adapted from [
162].
Reference | Structure | Bandwidth | PGR/SER | CAR | | Wavelength |
---|
[43] | Single-mode waveguide | 100 GHz | | 80 | – | 1538.2 and 1562.2 nm | [44] | Microring resonator | 2.1 GHz | | 12,105 | 0.00533 | 1535.5 and 1574.7 nm | [47]b | Multimode waveguide | 4 nm | | – | 0.053 | 1516 and 1588 nm | [48] | GaN defect | 3–50 nm | 1.5 MHz | – | 0.05 | 1085–1340 nm | [49]b | 2D | 8.5–37 nm | – | – | 0.058 | 1080–1550 nm | [50] | G center | 0.5 nm | 99 kHz | – | 0.07 | 1278 nm | [51] | T center | 255 MHz | – | – | 0.2 | 1326 nm |
|
Table 1. State-of-the-Art Photonic Sources at Telecommunications Wavelengthsa
Reference | Detection Efficiency | Jitter | Dark Count Rate | Reset Time | Temperature | Number Resolving |
---|
[37] | 91% | 18 ps | 50 Hz | 505 ps | 1.7 K | – | [84] | 100% | 55 ps | 0.1 Hz | 7 ns | 2.05 K | – | [87] | 30% | 32 ps | 1 Hz | 510 ps | 1.7 K | – | [88] | 70% | 480 ps | 0.1 MHz | 480 ps | 1.6 K | – | [91] | 5.6%b | 16.1 ps | 2 Hz | 85.8 ns | 1.0 K | 4 | [98] | 29.4% | 134 ps | 100 kHz | – | 125 K | – | [100] | 60.1% | – | 340 kHz | 88 ns | 300 K | – |
|
Table 2. State-of-the-Art Techniques for Integrated Single-Photon Detectiona
Reference | Structure | Size | Contrast | IL | FSR | Bandwidth |
---|
[116] | High-order microring | | 40 dB | 1.8 dB | 18 nm | 310 GHz (1 dB) | [111] | High-order microring | | 50 dB | 3 dB | 7.3 nm | 11.6–125 GHz (3 dB) | [115] | Unbalanced MZIs | | 15 dB | 9 dB | 0.8 nm | 0.61, 0.34, and 0.21 nm (3 dB) | [112] | WBG | | 35 dB | 0.6 dB | – | 3 nm (3 dB) | [119] | Cascaded WBG | | 65 dB | 3 dB | – | 1–2 nm (3 dB) | [120] | Cascaded WBG | | 60 dB | 2 dB | – | 5.5 nm (3 dB) |
|
Table 3. State-of-the-Art Techniques for Filtering in Silicon Photonicsa
Ref. | Technique | Loss | Bandwidth |
---|
[160] | Grating coupling | 0.58 dB (TE) | 71 nm (3 dB) | [165] | End coupling (tapered fiber) | 0.36 dB (TM); 0.66 dB (TE) | (1 dB) | [149] | End coupling (SMF) | 2.0 dB (TM); 1.2 dB (TE) | (1 dB) | [166] | End coupling (SMF) | 1.3 dB (TM); 0.95 dB (TE) | (1 dB) | [150] | 3D vertical coupling | 1 dB (TE and TM) | 170 nm (TE); 104 nm (TM) (1 dB) | [151] | 3D printing | 1.9 dB | – | [152,167,168] | Wire bonding | 0.4 dB | – | [153] | In situ 3D nanoprinting | 0.6 dB | – |
|
Table 4. State-of-the-Art Techniques for Chip Interconnection in Silicon Photonicsa