Contents
2012
Volume: 5 Issue 2
18 Article(s)

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Research Article
A special issue on Light-Emitting Diodes
Xiaobing LUO, and Sheng LIU
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 5, Issue 2, 117 (2012)
High-performance and current crowding-free InGaN-GaN based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN
Sei-Min KIM, Seon-Ho JANG, and Ja-Soon JANG
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 5, Issue 2, 127 (2012)
Optical constants study of YAG:Ce phosphor layer blended with SiO2 particles by Mie theory for white light-emitting diode package
Run HU, Xiaobing LUO, Huai ZHENG, and Sheng LIU
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 5, Issue 2, 138 (2012)
Vertical-external-cavity surface-emitting lasers and quantum dot lasers
Guangcun SHAN, Xinghai ZHAO, Mingjun HU, Chan-Hung SHEK, and Wei HUANG
The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells (Q
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 5, Issue 2, 157 (2012)
Preparation of titanium dioxide-double-walled carbon nanotubes and its application in flexible dye-sensitized solar cells
Cunxi CHENG, Jihuai WU, Yaoming XIAO, Yuan CHEN, Haijun YU, Ziying TANG, Jianming LIN, and Miaoliang HUANG
Frontiers of Optoelectronics
  • Publication Date: Jan. 01, 1900
  • Vol. 5, Issue 2, 224 (2012)