• Chinese Optics Letters
  • Vol. 20, Issue 4, (2022)
Huang Yaoran, Zhou Taojie, Tang Mingchu, Xiang Guohong, Li Haochuan, Martin Mickael, Baron Thierry, Chen Siming, Liu Huiyun , Zhang Zhaoyu
Author Affiliations
  • The Chinese University of Hong Kong
  • University College London
  • Grenoble
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    Abstract

    Monolithic integration of III-V light sources with small footprint and low power consumption based on CMOS-compatible Si substrate has been regarded as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and III-V materials limit the performance of monolithic microlasers. Here, we demonstrated 1.3 µm InAs/GaAs quantum dot photonic crystal bandedge lasers monolithically grown on on-axis Si (001) substrates with ultra-low threshold of ~ 4 µWby continuous-wave optically pumping at room-temperature, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.
    Manuscript Accepted: Jan. 14, 2022
    Posted: Jan. 14, 2022