• Photonics Research
  • Vol. 7, Issue 7, 07000B41 (2019)
Xiangyu He1、†, Enyuan Xie1、†, Mohamed Sufyan Islim2、†, Ardimas Andi Purwita2, Jonathan J. D. McKendry1, Erdan Gu1、*, Harald Haas2, and Martin D. Dawson1
Author Affiliations
  • 1Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow G1 1RD, UK
  • 2Li-Fi R&D Centre, the University of Edinburgh, Institute for Digital Communications, Edinburgh EH9 3JL, UK
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    Abstract

    The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride micro-light-emitting diodes (μLEDs) emitting in the UV-C region and their applications in deep-UV communication systems. The fabricated UV-C μLEDs with 566 μm2 emission area produce an optical power of 196 μW at the 3400 A/cm2 current density. The measured 3 dB modulation bandwidth of these μLEDs initially increases linearly with the driving current density and then saturates as 438 MHz at a current density of 71 A/cm2, which is limited by the cutoff frequency of the commercial avalanche photodiode used for the measurement. A deep-UV communication system is further demonstrated. By using the UV-C μLED, up to 800 Mbps and 1.1 Gbps data transmission rates at bit error ratio of 3.8×10 3 are achieved assuming on-off keying and orthogonal frequency-division multiplexing modulation schemes, respectively.
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    Xiangyu He, Enyuan Xie, Mohamed Sufyan Islim, Ardimas Andi Purwita, Jonathan J. D. McKendry, Erdan Gu, Harald Haas, Martin D. Dawson. 1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm[J]. Photonics Research, 2019, 7(7): 07000B41
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    Special Issue: Semiconductor UV Photonics
    Received: Nov. 26, 2018
    Accepted: May. 2, 2019
    Published Online: Jun. 21, 2019
    The Author Email: Erdan Gu (erdan.gu@strath.ac.uk)