Enhanced photoluminescence from porous silicon microcavities by rare earth doping

Di-fei SUN; Zhen-hong JIA; Jun ZHOU

doi:10.1007/s11801-016-5210-7

Journals >Optoelectronics Letters >Volume 12 >Issue 1 >Page 5 > Article

Optoelectronics Letters
Vol. 12, Issue 1, 5 (2016)

Enhanced photoluminescence from porous silicon microcavities by rare earth doping

Di-fei SUN¹, Zhen-hong JIA^2、*, and Jun ZHOU³

Author Affiliations

¹School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China

²School of Information Science and Engineering, Xinjiang University, Urumqi 830046, China

³Department of Physics, Ningbo University, Ningbo 315211, China

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DOI: 10.1007/s11801-016-5210-7 Cite this Article

SUN Di-fei, JIA Zhen-hong, ZHOU Jun. Enhanced photoluminescence from porous silicon microcavities by rare earth doping[J]. Optoelectronics Letters, 2016, 12(1): 5 Copy Citation Text

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Abstract

The photoluminescence (PL) properties of porous silicon microcavities (PSMs) in the visible range at room temperature are improved by doping the rare earth ytterbium (Yb) into PSMs prepared by the electrochemical etching method. It is observed that PSMs doped with the rare earth have an emission band around 630 nm. Compared with the single- layer porous silicon (PS) film, the PSMs doped with Yb have narrower and stronger PL spectrum.

SUN Di-fei, JIA Zhen-hong, ZHOU Jun. Enhanced photoluminescence from porous silicon microcavities by rare earth doping[J]. Optoelectronics Letters, 2016, 12(1): 5

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