• Optoelectronics Letters
  • Vol. 12, Issue 1, 52 (2016)
Zhao-feng WU1、*, Lei GUO1, Kun CHENG1, Feng ZHANG2, and Rong-feng GUAN3
Author Affiliations
  • 1School of Mathematics and Physics, Yancheng Institute of Technology, Yancheng 224051, China
  • 2Civil Engineering Department, Yancheng Institute of Technology, Yancheng 224051, China
  • 3Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051, China
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    DOI: 10.1007/s11801-016-5236-x Cite this Article
    WU Zhao-feng, GUO Lei, CHENG Kun, ZHANG Feng, GUAN Rong-feng. Influence of Mn-doping concentration on the microstructure and magnetic properties of ZnO thin films[J]. Optoelectronics Letters, 2016, 12(1): 52 Copy Citation Text show less

    Abstract

    The microstructure and magnetic properties of Mn-doped ZnO films with various Mn contents, synthesized by magnetron sputtering at room temperature, are investigated in detail. X-ray diffraction (XRD) measurement results suggest that the doped Mn ions occupy the Zn sites successfully and do not change the crystal structure of the ZnO films. However, the microstructure of the Mn-doped ZnO films apparently changes with increasing the Mn concentration. Arrays of well-aligned nanoscale rods are found in the Mn-doped ZnO films with moderate Mn concentrations. Magnetic measurement results indicate that the ZnO films doped with moderate Mn concentration are ferromagnetic at room temperature. The possible origin of the ferromagnetism in our samples is also explored in detail.
    WU Zhao-feng, GUO Lei, CHENG Kun, ZHANG Feng, GUAN Rong-feng. Influence of Mn-doping concentration on the microstructure and magnetic properties of ZnO thin films[J]. Optoelectronics Letters, 2016, 12(1): 52
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